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| (R) 1N581x LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj VF (max) FEATURES AND BENEFITS n n n n n 1A 40 V 150C 0.45 V VERY SMALL CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES EXTREMELY FAST SWITCHING LOW FORWARD VOLTAGE DROP AVALANCHE CAPABILITY SPECIFIED DO41 DESCRIPTION Axial Power Schottky rectifier suited for Switch Mode Power Supplies and high frequency DC to DC converters. Packaged in DO41 these devices are intended for use in low voltage, high frequency inverters, free wheeling, polarity protection and small battery chargers. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM PARM Tstg Tj dV/dt Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage TL = 125C = 0.5 tp = 10 ms Sinusoidal tp = 1s Tj = 25C 1200 Value 1N5817 1N5818 1N5819 20 30 40 10 1 25 1200 - 65 to + 150 150 10000 900 Unit V A A A W C C V/s *: dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a ) 1/5 July 2003 - Ed: 4A 1N581x THERMAL RESISTANCES Symbol Rth (j-a) Rth (j-l) Junction to ambient Junction to lead Parameter Lead length = 10 mm Lead length = 10 mm Value 100 45 Unit C/W C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF * Parameter Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 100C Tj = 25C Tj = 25C Pulse test : * tp = 380 s, < 2% VR = VRRM IF = 1 A IF = 3 A 1N5817 1N5818 1N5819 0.5 0.5 0.5 10 0.45 0.75 10 0.50 0.80 10 0.55 0.85 Unit mA mA V V To evaluate the conduction losses use the following equations : P = 0.3 x IF(AV) + 0.090 IF2(RMS ) for 1N5817 / 1N5818 P = 0.3 x IF(AV) + 0.150 IF2(RMS ) for 1N5819 Fig. 1: Average forward power dissipation versus average forward current (1N5817/1N5818). PF(av)(W) 0.6 0.5 = 0.05 = 0.1 = 0.2 = 0.5 Fig. 2: Average forward power dissipation versus average forward current (1N5819). PF(av)(W) 0.7 0.6 0.5 = 0.1 = 0.05 =1 = 0.2 = 0.5 0.4 0.3 =1 0.4 0.3 0.2 T 0.2 0.1 tp T 0.1 IF(av) (A) =tp/T 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 tp =tp/T IF(av) (A) 0.0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 Fig. 2-1: Average forward current versus ambient temperature (=0.5) (1N5817/1N5818). IF(av)(A) 1.2 Rth(j-a)=Rth(j-l)=45C/W Fig. 2-2: Average forward current versus ambient temperature (=0.5) (1N5819). IF(av)(A) Rth(j-a)=Rth(j-l)=45C/W 1.2 1.0 Rth(j-a)=100C/W 1.0 0.8 0.6 0.4 T 0.8 0.6 0.4 T Rth(j-a)=100C/W 0.2 =tp/T tp 0.2 Tamb(C) 50 75 100 125 150 =tp/T tp Tamb(C) 50 75 100 125 150 0.0 0 25 0.0 0 25 2/5 1N581x Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1s) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 0 10 100 1000 Tj(C) 0 25 50 75 100 125 150 Fig. 5-1: Non repetitive surge peak forward current versus overload duration (maximum values) (1N5817/1N5818). 10 9 8 7 6 5 4 3 2 1 0 1E-3 IM t Fig. 5-2: Non repetitive surge peak forward current versus overload duration (maximum values) (1N5819). 8 7 6 IM(A) IM(A) Ta=25C Ta=75C 5 4 3 Ta=25C Ta=75C Ta=100C 2 IM Ta=100C =0.5 t(s) 1E-2 1E-1 1E+0 1 0 1E-3 t =0.5 t(s) 1E-2 1E-1 1E+0 Fig. 6: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35mm, recommended pad layout). 1.0 0.8 0.6 0.4 = 0.2 Fig. 7: Junction capacitance versus reverse voltage applied (typical values). Zth(j-a)/Rth(j-a) C(pF) 500 F=1MHz Tj=25C 200 1N5817 = 0.5 100 1N5818 50 T = 0.1 Single pulse 1N5819 0.2 20 tp(s) 1E+1 =tp/T tp VR(V) 10 1 2 5 10 20 40 0.0 1E-1 1E+0 1E+2 1E+3 3/5 1N581x Fig. 8-1: Reverse leakage current versus reverse voltage applied (typical values) (1N5817/1N5818). IR(mA) Tj=125C 1N5818 1N5817 Fig. 8-2: Reverse leakage current versus reverse voltage applied (typical values) (1N5819). IR(mA) Tj=125C 1E+1 1E+1 1E+0 Tj=100C 1E+0 Tj=100C 1E-1 1E-1 1E-2 Tj=25C 1E-2 Tj=25C VR(V) 1E-3 0 5 10 15 20 25 30 1E-3 0 5 10 15 VR(V) 20 30 35 40 Fig. 9-1: Forward voltage drop versus forward current (typical values) (1N5817/1N5818). IFM(A) Fig. 9-2: Forward voltage drop versus forward current (typical values) (1N5819). IFM(A) 10.00 10.00 1.00 Tj=100C Tj=125C 1.00 Tj=100C Tj=125C 0.10 Tj=25C 0.10 Tj=25C 0.01 0.0 VFM(V) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 VFM(V) 0.01 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 Fig. 10: Non repetitive surge peak forward current versus number of cycles. IFSM(A) F=50Hz Tj initial=25C 30 25 20 15 10 5 Number of cycles 0 1 10 100 1000 4/5 1N581x PACKAGE MECHANICAL DATA DO41 plastic DIMENSIONS C A C OB / REF. Millimeters Min. Max. 5.2 2.7 0.86 Inches Min. 0.16 0.08 1 0.028 0.034 Max. 0.205 0.107 A B OD / OD / 4.1 2 25.4 0.71 C D Ordering type 1N581x 1N581xRL n Marking Part number cathode ring Part number cathode ring Package DO41 DO41 Weight 0.34g 0.34g Base qty 2000 5000 Delivery mode Ammopack Tape & reel Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5 |
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